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Thermally Stable Ferroelectric HfO2:Al2O3 (10:1) in Silicon-on-Insulator and Silicon-on-Sapphire Heterostructures after Rapid Thermal Annealing Treatments and Oxidation-Induced Silicon Thinning

Crossref DOI link: https://doi.org/10.1134/S0021364025606359

Published Online: 2025-07-31

Published Print: 2025-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Popov, V. P.

Antonov, V. A.

Zhilitskii, V. E.

Lomov, A. A.

Miakonkikh, A. V.

Rudenko, K. V.
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Text and Data Mining valid from 2025-06-01

Version of Record valid from 2025-06-01
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Article History

Received: 7 April 2025

Revised: 2 May 2025

Accepted: 3 May 2025

First Online: 31 July 2025

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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