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Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

Crossref DOI link: https://doi.org/10.1134/S0022476614060298

Published Online: 2015-01-24

Published Print: 2014-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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