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The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

Crossref DOI link: https://doi.org/10.1134/S0030400X20050100

Published Online: 2020-06-15

Published Print: 2020-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Parfenov, P. S.

Litvin, A. P.

Onishchuk, D. A.

Gonchar, K. A.

Berwick, K.

Fedorov, A. V.

Baranov, A. V.
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Text and Data Mining valid from 2020-05-01

Version of Record valid from 2020-05-01
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Article History

Received: 27 January 2020

Revised: 27 January 2020

Accepted: 6 February 2020

First Online: 15 June 2020

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