Effect of the content of hydrogen fluoride in an etchant on the formation of nanopores in silicon during electrolytic etching
Crossref DOI link: https://doi.org/10.1134/S0036023614110023
Published Online: 2014-10-23
Published Print: 2014-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Abramova, E. N.
Gvelesiani, A. A.
Khort, A. M.
Yakovenko, A. G.
Text and Data Mining valid from 2014-10-23