Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
Crossref DOI link: https://doi.org/10.1134/S1027451017020318
Published Online: 2017-04-27
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rysbaev, A. S.
Khujaniyozov, J. B.
Bekpulatov, I. R.
Rakhimov, A. M.
Pardaev, O. R.
License valid from 2017-03-01