On the Growth of High-Temperature Epitaxial AlN (AlGaN) Layers on Sapphire Substrates by Ammonia Molecular Beam Epitaxy
Crossref DOI link: https://doi.org/10.1134/S1027451017060167
Published Online: 2018-02-27
Published Print: 2017-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mayboroda, I. O.
Ezubchenco, I. S.
Grishchenko, Yu. V.
Presniakov, M. Yu.
Zanaveskin, M. L.
Text and Data Mining valid from 2017-11-01
Article History
Received: 14 March 2017
First Online: 27 February 2018