High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions
Crossref DOI link: https://doi.org/10.1134/S1027451020060142
Published Online: 2020-12-28
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rysbaev, A. S.
Normurodov, M. T.
Rakhimov, A. M.
Tursunmetova, Z. A.
Tashatov, A. K.
Text and Data Mining valid from 2020-11-01
Version of Record valid from 2020-11-01
Article History
Received: 11 January 2020
Revised: 4 February 2020
Accepted: 7 February 2020
First Online: 28 December 2020