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Determination of Optimal ITO Current-Spreading Layer Parameters for LEDs Based on AlInGaN Heterostructures and Developing a Technology to Form Such Layers on p-GaN Surfaces

Crossref DOI link: https://doi.org/10.1134/S1062873825712711

Published Online: 2025-10-28

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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