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Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

Crossref DOI link: https://doi.org/10.1134/S1063739714030056

Published Online: 2014-07-15

Published Print: 2014-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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