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Anisotropic trench etching of silicon with high aspect ratio and aperture of 30–50 nm in a two-stage plasma-chemical cyclic process

Crossref DOI link: https://doi.org/10.1134/S106373971502002X

Published Online: 2015-03-04

Published Print: 2015-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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