Document is current

Any future updates will be listed below

Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2, and Cl2 mixtures

Crossref DOI link: https://doi.org/10.1134/S1063739715040046

Published Online: 2015-09-02

Published Print: 2015-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark