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Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

Crossref DOI link: https://doi.org/10.1134/S106373971508003X

Published Online: 2015-11-21

Published Print: 2015-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Enisherlova, K. L.

Goryachev, V. G.

Temper, E. M.

Kapilin, S. A.
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