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Electrical properties of a TiN/Ti x Al1 – x O y /TiN memristor device manufactured by magnetron sputtering

Crossref DOI link: https://doi.org/10.1134/S1063739716060020

Published Online: 2017-02-09

Published Print: 2016-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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