TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric
Crossref DOI link: https://doi.org/10.1134/S106373971607012X
Published Online: 2017-02-16
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Petrosyants, K. O.
Popov, D. A.
Sambursky, L. M.
Kharitonov, I. A.
License valid from 2016-12-01