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Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor

Crossref DOI link: https://doi.org/10.1134/S1063739717010061

Published Online: 2017-03-23

Published Print: 2017-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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