Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
Crossref DOI link: https://doi.org/10.1134/S1063739717050079
Published Online: 2017-09-14
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pavlov, A. Yu.
Pavlov, V. Yu.
Slapovskiy, D. N.
Arutyunyan, S. S.
Fedorov, Yu. V.
Mal’tsev, P. P.
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