The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them
Crossref DOI link: https://doi.org/10.1134/S1063739717080066
Published Online: 2018-03-07
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Enisherlova, K. L.
Goryachev, V. G.
Saraykin, V. V.
Kapilin, S. A.
Text and Data Mining valid from 2017-12-01
Version of Record valid from 2017-12-01
Article History
First Online: 7 March 2018