Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators
Crossref DOI link: https://doi.org/10.1134/S106373971807003X
Published Online: 2019-03-13
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gruzdov, V. V.
Enisherlova, K. L.
Kolkovsky, Y. V.
Davydov, N. V.
Kapilin, S. A.
Text and Data Mining valid from 2018-11-01
Article History
Received: 4 April 2017
Accepted: 13 June 2017
First Online: 13 March 2019