Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect
Crossref DOI link: https://doi.org/10.1134/S1063739718070119
Published Online: 2019-03-13
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sergeev, V. A.
Hodakov, A. M.
Text and Data Mining valid from 2018-11-01
Article History
Received: 21 December 2016
Accepted: 12 September 2017
First Online: 13 March 2019