Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon
Crossref DOI link: https://doi.org/10.1134/S1063739719030090
Published Online: 2019-06-13
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rudenko, M. K.
Myakon’kikh, A. V.
Lukichev, V. F.
Text and Data Mining valid from 2019-05-01
Version of Record valid from 2019-05-01
Article History
Received: 7 December 2018
Revised: 17 December 2018
Accepted: 24 December 2018
First Online: 13 June 2019