The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT
Crossref DOI link: https://doi.org/10.1134/S1063739719080055
Published Online: 2020-03-10
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Enisherlova, K. L.
Medvedev, B. K.
Temper, E. M.
Korneev, V. I.
Text and Data Mining valid from 2019-12-01
Version of Record valid from 2019-12-01
Article History
Received: 12 February 2019
First Online: 10 March 2020