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Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate

Published Online: 2021-01-27

Published Print: 2020-11

Authors

Egorkin, V. I.

Zemlyakov, V. E.

Kapaev, V. V.

Kukhtyaeva, O. B.
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Text and Data Mining valid from 2020-11-01

Version of Record valid from 2020-11-01
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Article History

Received: 13 April 2020

Revised: 14 May 2020

Accepted: 14 May 2020

First Online: 27 January 2021

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