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The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors

Crossref DOI link: https://doi.org/10.1134/S1063739722010036

Published Online: 2022-06-07

Published Print: 2022-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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