Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor
Crossref DOI link: https://doi.org/10.1134/S1063739722700044
Published Online: 2022-12-23
Published Print: 2022-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lokotko, V. V.
Vasil’evskii, I. S.
Kargin, N. I.
Text and Data Mining valid from 2022-12-01
Version of Record valid from 2022-12-01
Article History
Received: 17 June 2022
Revised: 11 July 2022
Accepted: 11 July 2022
First Online: 23 December 2022
CONFLICT OF INTEREST
: The authors declare that they have no conflicts of interest.