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Investigation of the Influence of the Buffer Layer Design in a GaN HEMT Transistor on the Breakdown Characteristics

Published Online: 2024-03-21

Published Print: 2023-12

Authors

Kurbanbaeva, D. M.

Lashkov, A. V.

Tsarik, K. A.
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Text and Data Mining valid from 2023-12-01

Version of Record valid from 2023-12-01
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Article History

Received: 15 November 2023

Revised: 15 November 2023

Accepted: 25 November 2023

First Online: 21 March 2024

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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