Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device
Crossref DOI link: https://doi.org/10.1134/S1063739723700233
Published Online: 2023-06-20
Published Print: 2023-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Maryam Shaveisi,
Peiman Aliparast,
Text and Data Mining valid from 2023-04-01
Version of Record valid from 2023-04-01
Article History
Received: 24 November 2022
Revised: 21 January 2023
Accepted: 21 January 2023
First Online: 20 June 2023
CONFLICT OF INTEREST
: The authors declare that they have no conflicts of interest.