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Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric

Published Online: 2023-10-01

Published Print: 2023-08

Authors

Masalskii, N. V.
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Text and Data Mining valid from 2023-08-01

Version of Record valid from 2023-08-01
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Article History

Received: 6 February 2023

Revised: 1 March 2023

Accepted: 2 March 2023

First Online: 1 October 2023

CONFLICT OF INTEREST

: The author declares that he has no conflicts of interest.

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