Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation
Crossref DOI link: https://doi.org/10.1134/S1063739723700506
Published Online: 2023-10-01
Published Print: 2023-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Glushko, A. A.
Morozov, S. A.
Chistyakov, M. G.
Text and Data Mining valid from 2023-08-01
Version of Record valid from 2023-08-01
Article History
Received: 6 April 2023
Revised: 20 April 2023
Accepted: 22 April 2023
First Online: 1 October 2023
CONFLICT OF INTEREST
: The authors declare that they have no conflicts of interest.