Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor
Crossref DOI link: https://doi.org/10.1134/S1063739723900043
Published Online: 2024-02-08
Published Print: 2023-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tsunvaza, D.
Ryzhuk, R. V.
Vasil’evskii, I. S.
Kargin, N. I.
Klokov, V. A.
Text and Data Mining valid from 2023-12-01
Version of Record valid from 2024-02-08
Article History
Received: 16 November 2023
Revised: 16 November 2023
Accepted: 16 November 2023
First Online: 8 February 2024