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Simulation of Silicon Field-Effect Conical GAA Nanotransistors with a Stacked SiO2/HfO2 Subgate Dielectric

Published Online: 2024-07-26

Published Print: 2024-06

Authors

Masal’skii, N. V.
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Text and Data Mining valid from 2024-06-01

Version of Record valid from 2024-06-01
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Article History

Received: 15 February 2024

Revised: 20 March 2024

Accepted: 20 March 2024

First Online: 26 July 2024

CONFLICT OF INTEREST

: The author of this work declares that he has no conflicts of interest.

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