Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Crossref DOI link: https://doi.org/10.1134/S1063774515030062
Published Online: 2015-05-26
Published Print: 2015-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Galiev, G. B.
Vasiliev, A. L.
Vasil’evskii, I. S.
Imamov, R. M.
Klimov, E. A.
Klochkov, A. N.
Lavruhin, D. V.
Maltsev, P. P.
Pushkarev, S. S.
Trunkin, I. N.
Text and Data Mining valid from 2015-05-01