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Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

Crossref DOI link: https://doi.org/10.1134/S1063774515060036

Published Online: 2015-11-18

Published Print: 2015-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Belogorohov, I. A.

Donskov, A. A.

Knyazev, S. N.

Kozlova, Yu. P.

Pavlov, V. F.

Yugova, T. G.
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