Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping
Crossref DOI link: https://doi.org/10.1134/S1063774516020036
Published Online: 2016-04-15
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aleshin, A. N.
Bugaev, A. S.
Ermakova, M. A.
Ruban, O. A.
Text and Data Mining valid from 2016-03-01