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Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method

Published Online: 2022-05-24

Published Print: 2022-06

Authors

Yugova, T. G.

Knyazev, S. N.

Pavlova, O. S.
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Text and Data Mining valid from 2022-05-24

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Article History

Received: 9 December 2020

Revised: 9 December 2020

Accepted: 18 January 2021

First Online: 24 May 2022

CONFLICT OF INTEREST

: The authors declare that they have no conflicts of interest.

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