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Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Crossref DOI link: https://doi.org/10.1134/S1063774524601485

Published Online: 2024-09-27

Published Print: 2024-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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