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Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

Crossref DOI link: https://doi.org/10.1134/S1063776114040098

Published Online: 2014-05-11

Published Print: 2014-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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