Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping
Crossref DOI link: https://doi.org/10.1134/S1063782614050121
Published Online: 2014-05-07
Published Print: 2014-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lukashin, V. M.
Pashkovskii, A. B.
Zhuravlev, K. S.
Toropov, A. I.
Lapin, V. G.
Golant, E. I.
Kapralova, A. A.
Text and Data Mining valid from 2014-05-01