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Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

Crossref DOI link: https://doi.org/10.1134/S106378261407015X

Published Online: 2014-07-04

Published Print: 2014-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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