Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells
Crossref DOI link: https://doi.org/10.1134/S1063782614080065
Published Online: 2014-08-06
Published Print: 2014-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bochkareva, N. I.
Rebane, Y. T.
Shreter, Y. G.
Text and Data Mining valid from 2014-08-01