Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose
Crossref DOI link: https://doi.org/10.1134/S1063782614100285
Published Online: 2014-10-09
Published Print: 2014-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tyschenko, I. E.
Volodin, V. A.
Kozlovski, V. V.
Popov, V. P.
Text and Data Mining valid from 2014-10-01