Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers
Crossref DOI link: https://doi.org/10.1134/S1063782615010121
Published Online: 2015-01-08
Published Print: 2015-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khazanova, S. V.
Degtyarev, V. E.
Tikhov, S. V.
Baidus, N. V.
Text and Data Mining valid from 2015-01-01