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Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

Published Online: 2015-01-08

Published Print: 2015-01

Authors

Khazanova, S. V.

Degtyarev, V. E.

Malekhonova, N. V.

Pavlov, D. A.

Baidus, N. V.
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Text and Data Mining valid from 2015-01-01

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Article History

Received: 23 May 2014

Accepted: 15 June 2014

First Online: 8 January 2015

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