Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
Crossref DOI link: https://doi.org/10.1134/S1063782615020232
Published Online: 2015-02-05
Published Print: 2015-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Volkova, N. S.
Gorshkov, A. P.
Tikhov, S. V.
Baidus, N. V.
Khazanova, S. V.
Degtyarev, V. E.
Filatov, D. O.
Text and Data Mining valid from 2015-02-01
Version of Record valid from 2015-02-01
Article History
Received: 23 May 2014
Accepted: 15 June 2014
First Online: 5 February 2015