Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063782615040144
Published Online: 2015-04-16
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lazarenko, A. A.
Nikitina, E. V.
Sobolev, M. S.
Pirogov, E. V.
Denisov, D. V.
Egorov, A. Yu.
Text and Data Mining valid from 2015-04-01