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A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT

Crossref DOI link: https://doi.org/10.1134/S1063782615040168

Published Online: 2015-04-16

Published Print: 2015-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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