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Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

Crossref DOI link: https://doi.org/10.1134/S1063782615070179

Published Online: 2015-07-01

Published Print: 2015-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lavrukhin, D. V.

Yachmenev, A. E.

Bugaev, A. S.

Galiev, G. B.

Klimov, E. A.

Khabibullin, R. A.

Ponomarev, D. S.

Maltsev, P. P.
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