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Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping

Crossref DOI link: https://doi.org/10.1134/S1063782615080035

Published Online: 2015-08-02

Published Print: 2015-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Aleshin, A. N.

Bugaev, A. S.

Ermakova, M. A.

Ruban, O. A.
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