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On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Crossref DOI link: https://doi.org/10.1134/S1063782615080229

Published Online: 2015-08-02

Published Print: 2015-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Veleschuk, V. P.

Vlasenko, A. I.

Kisselyuk, M. P.

Vlasenko, Z. K.

Khmil’, D. N.

Borshch, V. V.
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