Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well
Crossref DOI link: https://doi.org/10.1134/S1063782615090122
Published Online: 2015-09-03
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Galiev, G. B.
Vasil’evskii, I. S.
Klimov, E. A.
Klochkov, A. N.
Lavruhin, D. V.
Pushkarev, S. S.
Maltsev, P. P.
Text and Data Mining valid from 2015-09-01