Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
Crossref DOI link: https://doi.org/10.1134/S1063782615120027
Published Online: 2015-12-10
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Andreev, I. A.
Serebrennikova, O. Yu.
Il’inskaya, N. D.
Pivovarova, A. A.
Konovalov, G. G.
Kunitsyna, E. V.
Sherstnev, V. V.
Yakovlev, Yu. P.
Text and Data Mining valid from 2015-12-01